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| 2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3398 Switching Regulator and DC-DC Converter Applications and Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 0.4 m (typ.) High forward transfer admittance: |Yfs| = 9.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 12 48 100 364 12 10 150 -55 to150 Unit V V V A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.25 Unit C/W Circuit Configuration 4 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 5.85 mH, RG = 25 W, IAR = 12 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 3 1 2002-09-04 2SK3398 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD ~ 400 V, VGS = 10 V, ID = 10 A Duty < 1%, tw = 10 ms = VDD ~ 200 V Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr ton 10 V VGS 0V 50 9 ID = 6 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 mA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6 A VDS = 10 V, ID = 6 A Min 3/4 30 3/4 500 2.0 3/4 4.0 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 0.4 9.0 2040 200 630 22 58 36 180 45 25 20 Max 10 3/4 100 3/4 4.0 0.52 3/4 3/4 3/4 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 nC pF Unit mA V mA V V W S RL = 33 W Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 12 A, VGS = 0 V IDR = 12 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 1200 16 Max 12 48 -1.7 3/4 3/4 Unit A A V ms mC Marking Lot Number K3398 Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-04 2SK3398 ID - VDS 12 Common source 10 Tc = 25C pulse test 24 10 15 6 5.2 5 20 10 15 6.0 ID - VDS Common source 5.5 5.75 16 5.2 12 5.0 4.75 4.5 Tc = 25C pulse test (A) ID Drain current 6 4 4.5 Drain current 4.75 ID 4.25 VGS = 4 V 8 (A) 8 2 4 VGS = 4.0 V 10 0 0 10 20 30 40 50 60 0 0 2 4 6 8 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 24 Common source VDS = 20 V 20 pulse test 12 VDS - VGS Common source Tc = 25C pulse test (A) ID 16 VDS Drain-source voltage (V) 10 8 Drain current 12 6 ID = 12 A 8 100 4 25 Tc = -55C 4 6 2 3 0 0 2 4 6 8 10 12 0 0 4 8 12 16 20 24 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID (S) 30 Common source VDS = 20 V 10 Pulse test 5 3 10 Common source 5 Tc = 25C Pulse test 3 RDS (ON) - ID iYfsi 100 25 Drain-source on resistance Tc = -55C Forward transfer admittance RDS (ON) (9) 1 0.5 0.3 VGS = 10, 15 V 0.1 0.1 1 0.5 0.3 0.1 0.3 0.5 1 3 5 10 30 0.3 0.5 1 3 5 10 30 Drain current ID (A) Drain current ID (A) 3 2002-09-04 2SK3398 RDS (ON) - Tc (W) 2.5 Common source VGS = 10 V pulse test 100 Common source Tc = 25C 30 pulse test IDR - VDS RDS (ON) 2.0 Drain reverse current IDR (A) ID = 12 A 10 Drain-source on resistance 1.5 3 10 5 3 1 -0.6 -0.8 -1.0 -1.2 1.0 3 0.5 6 1 0.3 VGS = 1 V 0 -80 -40 0 40 80 160 0.1 0 -0.2 -0.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 5000 3000 5 Ciss Vth - Tc Common source VDS = 10 V ID = 1 mA pulse test Gate threshold voltage Vth (V) 4 (pF) 1000 500 300 Coss 100 50 30 Common source VGS = 0 V f = 1 MHz Tc = 25C 0.3 0.5 1 3 5 10 Crss Capacitance C 3 2 1 10 0.1 30 50 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 50 600 Dynamic input/output characteristics Common source ID = 12 A Tc = 25C pulse test VDS VDD = 80 V 300 400 200 8 200 12 24 (W) (V) 40 500 20 VDS 400 16 Drain power dissipation 20 10 Drain-source voltage 100 VGS 6 0 0 40 80 120 160 200 0 0 10 20 30 40 50 0 60 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-09-04 Gate-source voltage 30 VGS PD (V) 2SK3398 rth - tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.3 0.2 0.1 0.05 0.02 0.03 0.01 Single Pulse PDM t T Duty = t/T Rth (ch-c) = 1.25C/W 100 m 1m 10 m 100 m 1 10 0.1 0.01 0.003 10 m Pulse width tw (S) Safe operating area 100 50 30 ID max (continuous) 10 ID max (pulsed) * 500 EAS - Tch (mJ) Avalanche energy EAS 100 ms * 400 (A) 5 3 1 ms * 300 ID Drain current 200 1 0.5 0.3 DC operation Tc = 25C 100 0 25 0.1 0.05 *: Single nonrepetitive pulse Tc = 25C 0.03 Curves must be derated linearly with increase in temperature. 0.01 10 1 VDSS max 100 1000 50 75 100 125 150 Channel temperature (initial) Tch (C) 15 V -15 V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 W VDD = 90 V, L = 4.3 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-09-04 2SK3398 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-04 This datasheet has been download from: www..com Datasheets for electronics components. |
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